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 DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D333
BYW28 series Ultra fast low-loss controlled avalanche rectifier
Product specification File under Discrete Semiconductors, SC01 1997 Nov 26
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability.
handbook, halfpage
BYW28 series
The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
DESCRIPTION Rugged glass SOD115 package, using a high temperature alloyed construction.
k
a
MAM384
Fig.1 Simplified outline (SOD115) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYW28-500 BYW28-600 VR continuous reverse voltage BYW28-500 BYW28-600 IF(AV) average forward current Ttp = 85 C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 C; see Fig.4 Tamb = 60 C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7 - - - 500 600 4 V V A - - 500 600 V V CONDITIONS MIN. MAX. UNIT
-
1.7
A
- - -
46 21 170
A A A
ERSM Tstg Tj
non-repetitive peak reverse avalanche energy storage temperature junction temperature
- -65 -65
20 +175 +175
mJ C C
1997 Nov 26
2
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYW28-500 BYW28-600 IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 f = 1 MHz; VR = 0; see Fig.10 when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.13 CONDITIONS IF = 3.5 A; Tj = Tj max; see Fig.8 IF = 3.5 A; see Fig.8 IR = 0.1 mA 560 675 - - - - - - - - MIN. - -
BYW28 series
TYP. - -
MAX. 0.90 1.15 V V
UNIT
- - 5 150 50
V V A A ns
Cd dI R -------dt
diode capacitance maximum slope of reverse recovery current
- -
275 -
- 4
pF A/s
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.11. For more information please refer to the `General Part of Handbook SC01'. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 20 70 UNIT K/W K/W
1997 Nov 26
3
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
GRAPHICAL DATA
BYW28 series
handbook, halfpage
8
MBK237
handbook, halfpage
3
MBK236
IF(AV) (A) 6
IF(AV) (A)
2
4
1 2
0 0 40 80 120 200 160 Ttp (C)
0 0 40 80 120 a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.11. Switched mode application. 160 200 Tamb (C)
a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
handbook, full pagewidth
50
MGL262
IFRM (A) 40
= 0.05
30 0.1
20 0.2
10
0.5 1
0 10-2
10-1
1
10
102
103
tp (ms)
104
Ttp = 85 C; Rth j-tp = 20 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = VRRMmax.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 26
4
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYW28 series
handbook, full pagewidth
30
MBK238
IFRM (A)
20
= 0.05
0.1 10 0.2
0.5 1 0 10-2 10-1 1 10 102 103 104
tp (ms)
Tamb = 60 C; Rth j-a = 70 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = VRRMmax.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, halfpage
5.0
MGL261
Ptot
handbook, halfpage
200
MGK645
(W) 4.0
a = 3 2.5 2 1.57 1.42
Tj (C)
3.0 100 2.0
1.0
0 0 1 2 3 4 5 IF(AV) (A)
0 0 50 VR (%VRmax) 100
a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.6
Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.7
Maximum permissible junction temperature as a function of reverse voltage.
1997 Nov 26
5
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYW28 series
handbook, halfpage
10
MBK235
IF (A) 8
103 handbook, halfpage IR (A) 102
MGC550
6
4 10 2
0 0 0.4 0.8 1.2 1.6 VF (V) 2.0
1 0 100 Tj (C) 200
Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
VR = VRRMmax.
Fig.8
Forward current as a function of forward voltage; maximum values.
Fig.9
Reverse current as a function of junction temperature; maximum values.
103 handbook, halfpage
MGL260
handbook, halfpage
50 25
Cd (pF) 7 102 50
2 3 10 1 10 102 VR (V) 103
MGA200
f = 1 MHz; Tj = 25 C. Dimensions in mm.
Fig.10 Diode capacitance as a function of reverse voltage; typical values.
Fig.11 Device mounted on a printed-circuit board.
1997 Nov 26
6
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
BYW28 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
IF handbook, halfpage dI F dt t rr 10% t dI R dt 100% IR
MGC499
Fig.13 Reverse recovery definitions.
1997 Nov 26
7
Philips Semiconductors
Ultra fast low-loss controlled avalanche rectifier
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
D
DIMENSIONS (mm are the original dimensions) UNIT mm b max. 1.35 D max. 5.5 G max. 6.0 L min. 27
(1)
Product specification
BYW28 series
SOD115
k
a
b
L
G
L
0
2.5 scale
5 mm
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD115 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1997 Nov 26
8
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
NOTES
BYW28 series
1997 Nov 26
9
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
NOTES
BYW28 series
1997 Nov 26
10
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifier
NOTES
BYW28 series
1997 Nov 26
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117027/1200/01/pp12
Date of release: 1997 Nov 26
Document order number:
9397 750 03121


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